semiconductor group 1 npn silicon rf transistor bf 959 l for saw filter driver applications in tv tuners l for linear broadband vhf amplifier stages l for oscillator applications maximum ratings type marking package 1) pin configuration bf 959 Q62702-F640 C to-92 1 2 3 c e b ordering code parameter symbol values unit collector-emitter voltage v ce0 20 v collector-base voltage v cb0 30 emitter-base voltage v eb0 3 thermal resistance junction - ambient r th ja 250 k/w total power dissipation, t a 25 ?c v ce 15 v p tot 500 mw storage temperature range t stg C 55 + 150 peak base current i bm 30 junction temperature t j 150 ?c ma collector-emitter reverse voltage v ces 30 peak collector current i cm 100 1) for detailed information see chapter package outlines.
semiconductor group 2 bf 959 bf 959 electrical characteristics at t a = 25 ?c, unless otherwise specified. unit values parameter symbol min. typ. max. dc characteristics ac characteristics v collector-emitter breakdown voltage i c = 1 ma v (br) ce0 20 C C na collector cutoff current v = 20 v i cb0 C C 100 C dc current gain, v ce = 10 v i c = 5 ma i c = 20 ma h fe 35 40 C 85 C C collector-base breakdown voltage i c = 10 m a v (br) cb0 30 C C emitter-base breakdown voltage i e = 10 m a v (br) eb0 3CC collector-emitter saturation voltage i c = 30 ma, i b = 2 ma v ce sat CC1 base-emitter saturation voltage i c = 30 ma, i b = 2 ma v be sat C C 0.95 v base-emitter voltage i c = 20 ma, v ce = 10 v v be C 0.75 C mhz transition frequency i c = 20 ma, v ce = 10 v, f = 100 mhz i c = 30 ma, v ce = 5 v f t 700 600 1100 C C C pf output capacitance v cb = 10 v, i e = 0, f = 1 mhz c obo C 0.9 C collector-base capacitance v ce = 10 v, v be = 0, f = 1 mhz c cb C 0.75 C ms output conductance i c = 20 ma, v ce = 10 v, f = 35 mhz g 22e C 0.06 C db noise figure v ce = 10 v, f = 200 mhz, r s = 60 w i c = 5 ma i c = 20 ma f C C 3 4 C C
semiconductor group 3 bf 959 bf 959 total power dissipation p tot = f ( t a ) collector-base capacitance c cb = f ( v cb ) f = 1 mhz transition frequency f t = f ( i c ) f = 100 mhz
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